1 GA200HS60S bulletin i27121 rev. b 07/02 v ces = 600v v ce(on) typ. = 1.19v @ v ge = 15v, i c = 200a t j = 25c "half-bridge" igbt int-a-pak standard speed igbt absolute maximum ratings v ces collector-to-emitter voltage 600 v i c continuos collector current @ t c = 25c 470 a @ t c = 110c 200 i cm pulsed collector current 800 i lm peak switching current 800 v ge gate-to-emitter voltage 20 v v isol rms isolation voltage, any terminal to case, t = 1 min 2500 p d maximum power dissipation @ t c = 25c 830 w @ t c = 85c 430 parameters max units ? generation 4 igbt technology ? standard speed: optimized for hard switching operating frequencies up to 1000 hz ? very low conduction losses ? industry standard package features ? increased operating efficiency ? direct mounting to heatsink ? performance optimized as output inverter stage for tig welding machines benefits int-a-pak www.irf.com www.datasheet.co.kr datasheet pdf - http://www..net/
GA200HS60S bulletin i27121 rev. b 07/02 2 www.irf.com t j operating junction temperature range - 40 150 c t stg storage temperature range - 40 125 r thjc junction-to-case 0.15 c/ w r thcs case-to-sink 0.1 t mounting torque case to heatsink 4 nm case to terminal 1, 2, 3 3 weight 185 g v ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage 1.19 1.25 v ge = 15v, i c = 200a 1.17 - v ge = 15v, i c = 200a, t j = 125c v ge(th) gate threshold voltage 3 6 i c = 0.5ma i ces collector-to-emiter leakage 1 ma v ge = 0v, v ce = 600v current 10 v ge = 0v, v ce = 600v, t j = 125c i ges gate-to-emitter leakage current 250 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) parameters min typ max units test conditions q g total gate charge 1600 1700 nc i c = 200a q ge gate-emitter charge 260 340 v cc = 400v q gc gate-collector charge 580 670 v ge = 15v e on turn-on switching loss 27 mj i c = 200a, v cc = 480v, v ge = 15v e off turn-off switching loss 47 r g = 10 ? e ts total switching loss 74 free-wheeling diode: 30eth06 e on turn-on switching loss 29 31 mj i c = 200a, v cc = 480v, v ge = 15v e off turn-off switching loss 77 90 r g = 10 ? e ts total switching loss 106 121 free-wheeling diode: 30eth06, t j = 125c c ies input capacitance 32500 pf v ge = 0v c oes output capacitance 2080 v cc = 30v c res reverse transfer capacitance 380 f = 1.0 mhz switching characteristics @ t j = 25c (unless otherwise specified) parameters min typ max units test conditions thermal- mechanical specifications parameters min typ max units www.datasheet.co.kr datasheet pdf - http://www..net/
bulletin i27121 rev. b 07/02 3 GA200HS60S www.irf.com fig. 1 - typical output characteristics i c , collector-to-emitter current (a) v ce , collector-to-emitter voltage (v) fig. 2 - typical transfer characteristics i c , collector-to-emitter current (a) v ge , gate-to-emitter voltage (v) fig. 4 - typical collector-to-emitter voltage vs. junction temperature v ce , collector-to-emitter voltage (v) t j , junction temperature (c) fig. 3 - maximum collector current vs. case temperature maximum dc collector current (a) t c , case temperature (c) 10 100 1000 0.5 0.7 0.9 1.1 1.3 1.5 1.7 vge = 15v t = 25?c t = 125?c j j 1 10 100 1000 5678 vce = 10v 380s pulse width t = 25 ? c t = 125 ? c j j 0.5 1 1.5 2 20 40 60 80 100 120 140 160 i = 400a i = 200a i = 120a c c c 0 40 80 120 160 200 240 280 320 360 400 440 480 520 25 50 75 100 125 150 www.datasheet.co.kr datasheet pdf - http://www..net/
GA200HS60S bulletin i27121 rev. b 07/02 4 www.irf.com fig. 5 - typical gate charge vs. gate-to- emitter voltage v ge , gate-to-emitter voltage (v) q g , total gate charge (nc) 0 4 8 12 16 0 300 600 900 1200 1500 1800 vcc = 400v ic = 200a fig. 6 - typical switching losses vs gate resistance switching losses (mj) r g , gate reistance ( ? ) fig. 7 - typical switching losses vs collector-to-emitter current switching losses (mj) i c , collector-to-emitter current (a) 0 10 20 30 40 50 60 70 80 0 40 80 120 160 200 eon eoff tj = 125 ? c vce = 480v vge = 15v rge = 10 ? free-wheeling diode: 30eth06 10 20 30 40 50 60 70 80 0 1020304050 eoff eon tj = 25 ? c, vce = 480v vge = 15v, ic = 200a free-wheeling diode: 30eth06 www.datasheet.co.kr datasheet pdf - http://www..net/
bulletin i27121 rev. b 07/02 5 GA200HS60S www.irf.com outline table dimensions in millimeters electrical diagram functional diagram note: terminals 9 and 11 are not internally connected terminals 8 and 10 are not assembled in the package www.datasheet.co.kr datasheet pdf - http://www..net/
GA200HS60S bulletin i27121 rev. b 07/02 6 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 07/02 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site. ga 200 h s 60 s device code 1 2 3 4 5 ordering information table 1 - essential part number igbt modules 2 - current rating (200 = 200a) 3 - circuit configuration (h = half bridge without f/w diode) 4 - int-a-pak 5 - voltage code (60 = 600v) 6 - speed/ type (s = standard speed igbt) 6 www.datasheet.co.kr datasheet pdf - http://www..net/
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